The 1500nm SOA is based on the InP-based quantum well structure design, realizes population inversion through electrical pumping, and amplifies the optical signal using the stimulated emission principle. Its gain bandwidth covers the edge of the C band (1530-1565nm), and can be adapted to the 1500nm wavelength requirement by adjusting the band gap of the active area material. The typical small signal gain can reach 25-30dB, and the polarization-related loss can be reduced to less than 1dB through strained quantum well optimization.
This is a semiconductor optical amplifier in the 1550nm band. The saturated output power is 10dBm. It supports 3 working modes APC/ACC/AGC. The model adopts the latest touch screen design in 2025. The parameters are clearly visible on the display. Parameters can be adjusted directly on the screen, or the amplifier parameters can be controlled via software and commands.
From the video we can see that with the new model we can switch the working mode directly on the screen and adjust and set the values of power, current and gain.
The output power is at the 10dBm level, close to the lower limit of the saturated optical power (usually 12-15dBm), and is suitable for scenarios with high requirements for power stability. The dynamic characteristics are better than those of traditional rare-earth-doped fiber amplifiers.
Semiconductor optical amplifiers are specially used for power amplification of optical signals in O-band, S-band, C-band, etc., with a typical small signal gain ≥25dB. The product has the characteristics of high gain, wide operating wavelength, low power consumption, low polarization-dependent loss, high extinction ratio, etc. SOA optical amplifiers can be used in laser radar, coherent detection, fiber optic sensing, optical communication and other fields, and can also be customized according to customer application requirements.
The test report of this semiconductor optical amplifier.
